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sram as8s512k32 & as8s512k32a austin semiconductor, inc. as8s512k32 & as8s512k32a rev. 3.5 3/02 austin semiconductor, inc. reserves the right to change products or specifications without notice. 1 cs cs cs cs \ general description the austin semiconductor, inc. as8s512k32 and as8s512k32a are 16 megabit cmos sram modules organized as 512kx32 bits. these devices achieve high speed access, low power consumption and high reliability by employing advanced cmos memory technology. this military temperature grade product is ideally suited for military and space applications. features ? operation with single 5v supply ? high speed: 17, 20, 25 and 35ns ? built in decoupling caps for low noise ? organized as 512kx32 , byte selectable ? low power cmos ? ttl compatible inputs and outputs ? future offerings 3.3v power supply 15 ns ultra high speed options markings ? operating temperature ranges military (-55 o c to +125 o c) xt industrial (-40 o c to +85 o c) it ? timing 17ns -17 20ns -20 25ns -25 35ns -35 45ns -45 55ns -55 ? package ceramic quad flatpack q no.702 pin grid array p no.904 ? low power data retention mode l ? pinout military (no indicator) commercial a* *(available with q package only) pin assignment (top view) available as military specifications ? smd 5962-94611 (military pinout) ? mil-std-883 68 lead cqfp (q) military smd pinout option 512k x 32 sram sram memory array for more products and information please visit our web site at www.austinsemiconductor.com 68 lead cqfp commercial pinout option (a) 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 i/o17 i/o18 i/o19 vss i/o20 i/o21 i/o22 i/o23 vcc i/o24 i/o25 i/o26 i/o27 vss i/o28 i/o29 i/o30 i/o 14 i/o 13 i/o 12 vss i/o 11 i/o 10 i/o 9 i/o 8 vcc i/o 7 i/o 6 i/o 5 i/o 4 vss i/o 3 i/o 2 i/o 1 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 i/o 31 a6 a5 a4 a3 a2 a1 a0 vcc a13 a12 a11 a10 a9 a8 a7 i/o 0 i/o 16 a18 a17 cs4\ cs3\ cs2\ cs1\ nc vcc nc nc oe\ we\ a16 a15 a14 i/o 15 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 gnd i/o 8 i/o 9 i/o 10 i/o 11 i/o 12 i/o 13 i/o 14 i/o 15 i/o 16 i/o 17 i/o 18 i/o 19 i/o 20 i/o 21 i/o 22 i/o 23 gnd i/o 24 i/o 25 i/o 26 i/o 27 i/o 28 i/o 29 i/o 30 i/o 31 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 vcc a11 a12 a13 a14 a15 a16 cs1\ oe\ cs2\ a17 we2\ we3\ we4\ a18 nc nc nc a0 a1 a2 a3 a4 a5 cs3\ gnd cs4\ we1\ a6 a7 a8 a9 a10 vcc 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 66 lead pga (p) military smd pinout
sram as8s512k32 & as8s512k32a austin semiconductor, inc. as8s512k32 & as8s512k32a rev. 3.5 3/02 austin semiconductor, inc. reserves the right to change products or specifications without notice. 2 cs\4 cs\3 cs\2 cs\1 we\ oe\ a0 - a18 i/o 24 - i/o 31 i/o 16 - i/o 23 i/o 8 - i/o 15 i/o 0 - i/o 7 m3 m2 m1 m0 512k x 8 512k x 8 512k x 8 512k x 8 commercial pinout/block diagram cs military pinout/block diagram cs cs cs truth table mode oe\ ce\ we\ i/o power read llh d out active write(2) xll d in active standby xhx high z standby cs cs4\ cs3\ cs2\ cs1\
sram as8s512k32 & as8s512k32a austin semiconductor, inc. as8s512k32 & as8s512k32a rev. 3.5 3/02 austin semiconductor, inc. reserves the right to change products or specifications without notice. 3 absolute maximum ratings* voltage of vcc supply relative to vss......................-.5v to +7v storage temperature............................................-65c to +150c short circuit output current(per i/o).................................20ma voltage on any pin relative to vss....................-.5v to vcc+1v maximum junction temperature**...................................+150c *stresses greater than those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operation on the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. **junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. see the application information section at the end of this datasheet for more infor- mation. description symbol -17 -20 -25 -35 -45 -55 units notes power supply current: operating icc 700 650 600 570 570 550 ma 3,13 power supply current: standby i sbt1 240 240 190 190 150 150 ma 3, 13 cmos standby i sbt2 80 80 80 80 80 80 ma vin = vcc - 0.2v, or vss +0.2v vcc=max; f = 0hz max conditions cs\vih; vcc = max f = max = 1/ trc (min) outputs open electrical characteristics and recommended dc operating conditions (-55 o c < t a < 125 o c and -40 o c to +85 o c; vcc = 5v +10%) description conditions symbol min max units notes input high (logic 1) voltage v ih 2.2 v cc +.5 v1 input low (logic 1) voltage v il -0.5 0.8 v 1,2 input leakage current add,oe i li1 -10 10 m a input leakage current we, ce i li2 -10 10 m a output(s) disabled 0v sram as8s512k32 & as8s512k32a austin semiconductor, inc. as8s512k32 & as8s512k32a rev. 3.5 3/02 austin semiconductor, inc. reserves the right to change products or specifications without notice. 4 ac test conditions note: 1. this parameter is sampled. oh ol i i current source current source vz = 1.5v (bipolar supply) device under test ceff = 50pf -+ + notes: vz is programmable from -2v to + 7v. i ol and i oh programmable from 0 to 16 ma. vz is typically the midpoint of v oh and v ol . i ol and i oh are adjusted to simulate a typical resistive load circuit. input pulse levels.........................................v ss to 3v input rise and fall times.........................................5ns input timing reference levels...............................1.5v output reference levels........................................1.5v output load..............................................see figure 1 test specifications symbol parameter max units c add a0 - a18 capacitance 50 pf c oe oe\ capacitance 50 pf c we, c cs we\ and cs\ capacitance 20 pf c io i/o 0- i/o 31 capacitance 20 pf c we ("a" version) we\ capacitance 50 pf capacitance (v in = 0v, f = 1mhz, t a = 25 o c )1 figure 1
sram as8s512k32 & as8s512k32a austin semiconductor, inc. as8s512k32 & as8s512k32a rev. 3.5 3/02 austin semiconductor, inc. reserves the right to change products or specifications without notice. 5 electrical characteristics and recommended ac operating conditions (note 5) (-55 o c sram as8s512k32 & as8s512k32a austin semiconductor, inc. as8s512k32 & as8s512k32a rev. 3.5 3/02 austin semiconductor, inc. reserves the right to change products or specifications without notice. 6 read cycle no. 1 read cycle no. 2 1234 1234 1234 1234 1234 1234 12345 1 234 5 12345 1 1 1 1 1 1 address data i/o previous data valid data v alid t oh t aa t rc address t rc 12345678 12345678 12345678 12345678 12345678 1234 1 23 4 1 23 4 1 23 4 1234 12345 1 234 5 1 234 5 12345 123456789 123456789 123456789 123456789 123456789 123456 1 2345 6 1 2345 6 1 2345 6 123456 1234567 1 23456 7 1 23456 7 1234567 123456789012 123456789012 123456789012 123456789012 123456789012 1234 1 23 4 1 23 4 1 23 4 1234 12345 1 234 5 1 234 5 12345 123456789012 123456789012 123456789012 123456789012 123456789012 123456 1 2345 6 1 2345 6 1 2345 6 123456 1234567 1 23456 7 1 23456 7 1 23456 7 1234567 1234 1234 1234 1234 1234 1234 1234 1234 123 1 2 3 1 2 3 123 1 1 1 1 1 1 1 1 high impedance data valid t aa t acs t lzcs t hzcs t hzoe t aoe t lzoe cs\ oe\ data i/o
sram as8s512k32 & as8s512k32a austin semiconductor, inc. as8s512k32 & as8s512k32a rev. 3.5 3/02 austin semiconductor, inc. reserves the right to change products or specifications without notice. 7 write cycle no. 2 (write enable controlled) write cycle no. 1 (chip select controlled) address t wc 123456 123456 123456 123456 data valid t aw t as t wp2 1 t cw cs\ we\ data i/o t dh t ds 12345678 12345678 12345678 12345678 123456789012 123456789012 123456789012 123456789012 12345 1 234 5 1 234 5 12345 123456 1 2345 6 1 2345 6 123456 t ah address t wc 12345678 12345678 12345678 12345678 12345678 1234 1 23 4 1 23 4 1 23 4 1234 123456 1 2345 6 1 2345 6 1 2345 6 123456 123456789012 123456789012 123456789012 123456789012 123456789012 12345 1 234 5 1 234 5 1 234 5 12345 1234567 1 23456 7 1 23456 7 1 23456 7 1234567 123456 123456 123456 123456 1234 1234 1234 12345678901234 1 234567890123 4 12345678901234 1 1 1 1 1 1 data valid t aw t cw t as t ah t lzwe t wp1 1 t hzwe cs\ we\ data i/o 1234 1234 1234 1234 1 23 4 1 23 4 1234 1234 1 23 4 1 23 4 1234 t dh t ds
sram as8s512k32 & as8s512k32a austin semiconductor, inc. as8s512k32 & as8s512k32a rev. 3.5 3/02 austin semiconductor, inc. reserves the right to change products or specifications without notice. 8 7. at any given temperature and voltage condition, t hzcs , is less than t lzcs , and t hzwe is less than t lzwe . 8. we\ is high for read cycle. 9. device is continuously selected. chip selects and output enable are held in their active state. 10. address valid prior to or coincident with latest occurring chip enable. 11. t rc = read cycle time. 12. chip enable (cs\) and write enable (we\) can initiate and terminate a write cycle. 13. i cc is for 32 bit mode. notes 1. all voltages referenced to v ss (gnd). 2. -2v for pulse width <20ns. 3. i cc is dependent on output loading and cycle rates. the specified value applies with the outputs 4. this parameter guaranteed but not tested. 5. test conditions as specified with output loading as shown in fig. 1 unless otherwise noted. 6. t hzcs , t hzoe and t hzwe are specified with c l = 5pf as in fig. 2. transition is measured +/- 200 mv typical from steady state voltage, allowing for actual tester rc time constant. rc(min) unloaded, and f= h z. t 1 low v cc data retention waveform low power characteristics (l version only)

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sram as8s512k32 & as8s512k32a austin semiconductor, inc. as8s512k32 & as8s512k32a rev. 3.5 3/02 austin semiconductor, inc. reserves the right to change products or specifications without notice. 9 mechanical definitions* asi case #702 (package designator q) smd 5962-94611, case outline m *all measurements are in inches. 4 x d2 4 x d1 d b e min max a 0.123 0.200 a1 0.118 0.186 a2 0.000 0.020 b b 0.013 0.017 d d1 0.870 0.890 d2 0.980 1.000 e 0.936 0.956 e r 0.005 --- l1 0.035 0.045 symbol 0.800 bsc 0.050 bsc smd specifications 0.010 ref a2 see detail a a a1 e detail a l1 1 o - 7 o r b
sram as8s512k32 & as8s512k32a austin semiconductor, inc. as8s512k32 & as8s512k32a rev. 3.5 3/02 austin semiconductor, inc. reserves the right to change products or specifications without notice. 10 mechanical definitions* asi case #904 (package designator p ) smd 5962-94611, case outline t *all measurements are in inches. 4 x d d1 d2 e1 pin 66 e pin 11 pin 1 (identified by 0.060 square pad) pin 56 a a1 l f b e f b1 min max a 0.144 0.181 a1 0.025 0.035 f b 0.016 0.020 f b1 0.045 0.055 d 1.065 1.085 d1/e1 d2 e l 0.145 0.155 0.600 typ 0.100 typ symbol 1.000 typ smd specifications
sram as8s512k32 & as8s512k32a austin semiconductor, inc. as8s512k32 & as8s512k32a rev. 3.5 3/02 austin semiconductor, inc. reserves the right to change products or specifications without notice. 11 device number options** package t yp e speed ns options** process as8s512k32 a q -17 l /* as8s512k32 a q -20 l /* as8s512k32 a q -25 l /* as8s512k32 a q -35 l /* as8s512k32 a q -45 l /* as8s512k32 a q -55 l/* device number options** package t yp e speed ns options** process as8s512k32 p -17 l /* as8s512k32 p -20 l /* as8s512k32 p -25 l /* as8s512k32 p -35 l /* as8s512k32 p -45 l /* as8s512k32 p -55 l/* example: as8s512k32aq-25/it example: as8s512k32p-25l/xt ordering information *available processes it = industrial temperature range -40 o c to +85 o c xt = extended temperature range -55 o c to +125 o c 833c = full military processing -55 o c to +125 o c space= class k equivalent -55 o c to +125 o c **definition of options a = commercial pinout no indicator = military pinout l = low power data retention mode
sram as8s512k32 & as8s512k32a austin semiconductor, inc. as8s512k32 & as8s512k32a rev. 3.5 3/02 austin semiconductor, inc. reserves the right to change products or specifications without notice. 12 asi to dscc part number cross reference package designator q asi part # smd part # as8s512k32q-17l/883c 5962-9461110hma as8s512k32q-17l/883c 5962-9461110hmc as8s512k32q-20l/883c 5962-9461109hma as8s512k32q-20l/883c 5962-9461109hmc as8s512k32q-25l/883c 5962-9461108hma as8s512k32q-25l/883c 5962-9461108hmc as8s512k32q-35l/883c 5962-9461107hma as8s512k32q-35l/883c 5962-9461107hmc as8s512k32q-45l/883c 5962-9461106hma as8s512k32q-45l/883c 5962-9461106hmc as8s512k32q-55l/883c 5962-9461105hma as8s512k32q-55l/883c 5962-9461105hmc as8s512k32q-17/883c 5962-9461116hma as8s512k32q-17/883c 5962-9461116hmc as8s512k32q-20/883c 5962-9461115hma as8s512k32q-20/883c 5962-9461115hmc as8s512k32q-25/883c 5962-9461114hma as8s512k32q-25/883c 5962-9461114hmc as8s512k32q-35/883c 5962-9461113hma as8s512k32q-35/883c 5962-9461113hmc as8s512k32q-45/883c 5962-9461112hma as8s512k32q-45/883c 5962-9461112hmc as8s512k32q-55/883c 5962-9461111hma as8s512k32q-55/883c 5962-9461111hmc package designator p asi part # smd part # as8s512k32p-17l/883c 5962-9461110hta as8s512k32p-17l/883c 5962-9461110htc as8s512k32p-20l/883c 5962-9461109hta as8s512k32p-20l/883c 5962-9461109htc as8s512k32p-25l/883c 5962-9461108hta as8s512k32p-25l/883c 5962-9461108htc as8s512k32p-35l/883c 5962-9461107hta as8s512k32p-35l/883c 5962-9461107htc as8s512k32p-45l/883c 5962-9461106hta as8s512k32p-45l/883c 5962-9461106htc as8s512k32p-55l/883c 5962-9461105hta as8s512k32p-55l/883c 5962-9461105htc as8s512k32p-17/883c 5962-9461116hta as8s512k32p-17/883c 5962-9461116htc as8s512k32p-20/883c 5962-9461115hta as8s512k32p-20/883c 5962-9461115htc as8s512k32p-25/883c 5962-9461114hta as8s512k32p-25/883c 5962-9461114htc as8s512k32p-35/883c 5962-9461113hta as8s512k32p-35/883c 5962-9461113htc as8s512k32p-45/883c 5962-9461112hta as8s512k32p-45/883c 5962-9461112htc as8s512k32p-55/883c 5962-9461111hta as8s512k32p-55/883c 5962-9461111htc

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